PART |
Description |
Maker |
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYB25D128160AT-6 HYB25D128400AT-7 HYB25D128800AT-7 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 128Mb (32Mx4) DDR266A (2-3-3) DDR SDRAM Components - 128Mb (16mx8) DDR266A (2-3-3) 128 Mbit Double Data Rate SDRAM
|
Infineon
|
MF1117V-2 |
From old datasheet system FOR DIGITAL MOBILE TELEPHONE Rx FOR DIGITAL MOBILE TELEPHONE, Rx FOR DIGITAL MOBILE TELEPHONE / Rx GIGATRUE 550 CAT6 PINK STRANDED BULK 250FT
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
HYS64V1622 HYS64V8200GDL-8 HYS64V16220GDL HYS64V16 |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 35V; Case Size: 10x12.5 mm; Packaging: Bulk 128MB PC133 (3-3-3) 2-bank End-of-Life SDRAM Modules - 128MB PC133 (3-3-3) 2-bank End-of-Life
|
INFINEON[Infineon Technologies AG]
|
DVS-355-ZU25E DVS-355-MU25E DVS-355-SU25E DVS-355M |
Embedded/Mobile Digital Video Platform with Intel Core Duo Mobile Processor
|
Advantech Co., Ltd.
|
HYB18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
|
Qimonda AG
|
HYB18L256160BCL-7.5 HYB18L256160BFL-7.5 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
|
Qimonda AG
|
HYE18L512160BF-7.5 HYB18L512160BF-7.5 |
DRAMs for Mobile Applications 512-Mbit Mobile-RAM
|
Qimonda AG
|
HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V28 |
SDRAM - 128Mb 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
EBR12EC8ABSA-8C EBR12EC8ABSA-AD |
128MB Direct Rambus DRAM SO-RIMM Module 128MB Direct Rambus DRAM SO-RIMM?/a> Module 128MB Direct Rambus DRAM SO-RIMM垄芒 Module
|
Elpida Memory
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